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FSYE913A0R4中文资料
FSYE913A0R4数据手册规格书PDF详情
The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices which are ideally suited to harsh space environments. The dose rate and neutron tolerance necessary for military applications have not been sacrificed.
FSYE913A0R4产品属性
- 类型
描述
- 型号
FSYE913A0R4
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
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FSYE913A0R4 芯片相关型号
- 5082-5723-GE000
- 5082-5723-JE000
- FSYC360R4
- FSYC9160D
- FSYC9160R4
- FSYE13A0D1
- FSYE13A0R
- FSYE23A0R1
- FSYE430D3
- FSYE430R1
- FSYE913A0D3
- FSYE923A0D1
- FSYE923A0D3
- FSYE923A0R4
- HA1-2404-4
- HA-2541
- HA3-2505-5
- HA3-2542-5
- HLMP-1520-LP000
- HLMP-1521-MP000
- IDT542240ATSOB
- IDT6116SA45SO
- IDT7024S70G
- IDT70T633S15BCI
- IDT7133LA35J
- IDT7204S15TDB
- IDT742240ATSOB
- IDT74FCT646CTPGB
- IH5012
- IH5014
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