位置：首页 > IC中文资料第6298页 > FSYC260D3
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FSYC260D3 | Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combi | Intersil |   | |
44A, 200V, 0.050 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | Intersil | | ||
THYRISTORS 文件：229.72 Kbytes Page：4 Pages | DIGITRON | |
FSYC260D3产品属性
- 类型
描述
- 型号
FSYC260D3
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
14+ |
原厂封装 |
9 |
宇航IC只做原装假一罚十 |
|||
INTERSIL |
24+ |
N/A |
90000 |
一级代理商进口原装现货、价格合理 |
|||
HAR |
05+ |
原厂原装 |
4290 |
只做全新原装真实现货供应 |
|||
HAR |
23+ |
65480 |
|||||
INTERSIL |
24+ |
10 |
全新原装 |
||||
TI |
N/A |
N/A |
100 |
军工品,原装正品 |
|||
INTERSIL |
2015+ |
99 |
原装正品 |
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FSYC260D3规格书下载地址
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DdatasheetPDF页码索引
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