位置：首页 > IC中文资料第6355页 > FSTYC9055D
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FSTYC9055D | Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suite | INTERSIL |   | |
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suite | INTERSIL | | ||
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suite | INTERSIL | | ||
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs | RENESAS 瑞萨 | | ||
55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
55A, -60V, 0.029 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | | ||
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Immunity to Single Event Effects (SEE) is combined with 100K RADs of total dose hardness to provide devices which are ideally suite | INTERSIL | | ||
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul | INTERSIL | |
FSTYC9055D产品属性
- 类型
描述
- 型号
FSTYC9055D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Block |
24+ |
NA |
1681 |
进口原装正品优势供应 |
|||
VISHAY |
23+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
GeneSiC Semiconductor |
22+ |
TO249AB |
9000 |
原厂渠道,现货配单 |
|||
26+ |
N/A |
64000 |
一级代理-主营优势-实惠价格-不悔选择 |
||||
GeneSiC |
25+ |
电联咨询 |
7800 |
公司现货,提供拆样技术支持 |
|||
PANASONIC |
25+ |
传感器 |
96 |
就找我吧!--邀您体验愉快问购元件! |
FSTYC9055D规格书下载地址
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https://hch01.114ic.com/
2020-11-13FSU05B60
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2019-11-14
DdatasheetPDF页码索引
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