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FSPYE234D1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star

INTERSIL

FSPYE234D1

Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

RENESAS

瑞萨

4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs

Description The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particul

INTERSIL

FSPYE234D1产品属性

  • 类型

    描述

  • 型号

    FSPYE234D1

  • 制造商

    INTERSIL

  • 制造商全称

    Intersil Corporation

  • 功能描述

    Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs

更新时间:2026-5-18 11:36:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
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