位置：首页 > IC中文资料第6245页 > FSPYE234D1
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FSPYE234D1 | RadiationHardened,SEGRResistantN-ChannelPowerMOSFETs IntersilStar*PowerRadHardMOSFETshavebeenspecificallydevelopedforhighperformanceapplicationsinacommercialormilitaryspaceenvironment.Star*PowerMOSFETsofferthesystemdesignerbothextremelylowrDS(ON)andGateChargeallowingthedevelopmentoflowlossPowerSubsystems.Star | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 |  |   |
4A,250V,0.610Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | | |
6A,250V,0.600Ohm,RadHard,SEGRResistant,N-ChannelPowerMOSFETs Description TheDiscreteProductsOperationofIntersilCorporationhasdevelopedaseriesofRadiationHardenedMOSFETsspecificallydesignedforcommercialandmilitaryspaceapplications.EnhancedPowerMOSFETimmunitytoSingleEventEffects(SEE),SingleEventGateRupture(SEGR)inparticul | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | | |
FSPYE234D1产品属性
- 类型
描述
- 型号
FSPYE234D1
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FSC |
2016+ |
DIP8 |
3500 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
FSC |
2020+ |
DIP8 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
DIP8 |
14+ |
FAIRCHILD |
47 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Fairchild/ON |
21+ |
8LSOP |
13880 |
公司只售原装,支持实单 |
|||
FAIRCHILD |
20+/21+ |
8LSOP |
9500 |
全新原装正品价格优势 |
|||
FAIRCHILD |
23+ |
8-LSOP |
7750 |
全新原装优势 |
|||
DIP8 |
21+ |
FAIRCHILD |
47 |
原装现货假一赔十 |
|||
FSC |
2016+ |
DIP8 |
6528 |
只做原装正品现货!或订货 |
|||
FAIRCHILD/仙童 |
2048+ |
DIP8 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
FAIRCHILD/仙童 |
23+ |
DIP8 |
50000 |
全新原装正品现货,支持订货 |
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FSPYE234D1规格书下载地址
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2019-4-2
DdatasheetPDF页码索引
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