位置：首页 > IC中文资料第6244页 > FSL913A0D
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
FSL913A0D | 7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil |   | |
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | | ||
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | | ||
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | | ||
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | | ||
10A, -100V, 0.280 Ohm, Radiation Hardened, SEGR Resistant, P-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K | Intersil | | ||
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combin | Intersil | |
FSL913A0D产品属性
- 类型
描述
- 型号
FSL913A0D
- 制造商
INTERSIL
- 制造商全称
Intersil Corporation
- 功能描述
7A, -100V, 0.300 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
- |
24+ |
NA/ |
3300 |
原装现货,当天可交货,原型号开票 |
|||
TOKO |
23+ |
2520 |
20000 |
全新原装假一赔十 |
|||
TOKO |
0430+ |
SMD |
340 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR新货 |
25+ |
TO-262 |
50 |
原装正品,假一罚十! |
|||
TOKO |
03+ |
2520 |
2550 |
全新原装进口自己库存优势 |
|||
TOKO |
1948+ |
SMD |
6852 |
只做原装正品现货!或订货假一赔十! |
|||
IR |
23+ |
29178 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
||||
23+ |
原厂封装 |
11888 |
专做原装正品,假一罚百! |
||||
TOKO |
22+ |
SMD |
5000 |
全新原装现货!价格优惠!可长期 |
|||
TOKO |
24+ |
SMD |
2650 |
原装优势!绝对公司现货 |
FSL913A0D规格书下载地址
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DdatasheetPDF页码索引
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