| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................500V ●rDS(ON)(MAX).................................................................1.8Ω ●ID..................................................................................... | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 |  |   | |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................500V ●rDS(ON)(MAX).................................................................1.8Ω ●ID..................................................................................... | POWEREX Powerex Power Semiconductors |  | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=500V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.8Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................700V ●rDS(ON)(MAX)................................................................2.6Ω ●ID...................................................................................... | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................700V ●rDS(ON)(MAX)................................................................2.6Ω ●ID...................................................................................... | POWEREX Powerex Power Semiconductors | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=700V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.6Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE VDSS................................................................................800V rDS(ON)(MAX)................................................................2.3Ω ID............................................................................................ | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE VDSS................................................................................800V rDS(ON)(MAX)................................................................2.3Ω ID............................................................................................ | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................800V ●rDS(ON)(MAX)................................................................2.3Ω ●ID...................................................................................... | POWEREX Powerex Power Semiconductors | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=700V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.6Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................900V ●rDS(ON)(MAX)................................................................2.8Ω ●ID...................................................................................... | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................900V ●rDS(ON)(MAX)................................................................2.8Ω ●ID...................................................................................... | POWEREX Powerex Power Semiconductors | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=900V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.8Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
HIGH-SPEED SWITCHING USE ●VDSS..............................................................................250V ●rDS(ON)(MAX)..............................................................1.3Ω ●ID..........................................................................................5A ●Viso............... | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE ●VDSS..............................................................................250V ●rDS(ON)(MAX)..............................................................1.3Ω ●ID..........................................................................................5A ●Viso............... | POWEREX Powerex Power Semiconductors | | | |
MITSUBISHI Nch POWER MOSFET ●VDSS..............................................................................250V ●rDS(ON)(MAX)..............................................................1.3Ω ●ID..........................................................................................5A ●Viso............... | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 |  | | |
HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................300V ●rDS(ON)(MAX).................................................................1.6Ω ●ID..................................................................................... | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................300V ●rDS(ON)(MAX).................................................................1.6Ω ●ID..................................................................................... | POWEREX Powerex Power Semiconductors | | | |
MITSUBISHI Nch POWER MOSFET HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................300V ●rDS(ON)(MAX).................................................................1.6Ω ●ID..................................................................................... | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=300V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.6Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................450V ●rDS(ON)(MAX).................................................................1.4Ω ●ID..................................................................................... | MitsubishiMitsubishi Electric Semiconductor 三菱电机三菱电机株式会社 | | | |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●VDSS................................................................................450V ●rDS(ON)(MAX).................................................................1.4Ω ●ID..................................................................................... | POWEREX Powerex Power Semiconductors | | | |
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent-ID=5A@TC=25℃ ·DrainSourceVoltage-VDSS=450V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=1.4Ω(Max) DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEEDSWITCHINGUSE ●2.5VDRIVE ●VDSS...............................................................................100V ●rDS(ON)(MAX).............................................................0.44Ω ●ID.......................................................................... | POWEREX Powerex Power Semiconductors | | | |
HIGH-SPEED SWITCHING USE 文件：106.64 Kbytes Page：7 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED SWITCHING USE 文件：106.64 Kbytes Page：7 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | | |
HIGH-SPEED SWITCHING USE 文件：105.89 Kbytes Page：7 Pages | RENESASRenesas Technology Corp 瑞萨瑞萨科技有限公司 | | |
FS5KM产品属性
- 类型
描述
- 型号
FS5KM
- 制造商
Mitsubishi Electric
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
MITSUBIS |
2447 |
TO-220 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
M |
22+ |
TO-220F |
25000 |
只做原装进口现货,专注配单 |
|||
RENESAS |
24+ |
TO-220F |
16900 |
原装正品现货支持实单 |
|||
MITSUBISHI |
24+ |
TO-220F |
1600 |
||||
MITSUBISHI |
23+ |
TO220 |
21768 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
MITSUBISHI/三菱 |
98+ |
TO-220F |
4709 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
三凌 |
2022+ |
TO-220 |
12888 |
原厂代理 终端免费提供样品 |
|||
RENESAS |
21+ |
TO-220F |
4190 |
原装现货假一赔十 |
|||
RENESAS |
2020+ |
TO220F |
346 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
RENESAS |
19+ |
TO-220F |
15868 |
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FS5KM规格书下载地址
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FS5KM数据表相关新闻
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FS450R12KE4，当天发货0755-82732291全新原装现货或门市自取.
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2019-7-12FS6M07652-飞兆功率开关（FPS）
说明飞兆半导体的功率开关（FPS）产品系列是专门设计用于离线开关电源用最少的外部组件。飞兆半导体的功率开关（FPS）的一个组成高压值SenseFET和电流模式PWMIC。包括PWM控制器具有集成固定振荡器，根据电压锁定，前缘消隐的优化的栅极turn-on/turn-off驱动器，热关断保护，过电压保护，温度补偿精密电流源的循环补偿和故障保护电路。相比分立MOSFET和控制器或碾压混凝土开关转换器解决方案，一飞兆功率开关（FPS）可降低总元件数量，缩小设计尺寸和重量和同时提高效率，生产力和系统可靠性。它有一个基本的平台，以及适合的成本有效的液晶显示器电源。
2013-3-12FS6S-飞兆功率开关（FPS）
说明飞兆半导体的功率开关（FPS）产品系列是专门设计用于离线开关电源用最少外部元件。飞兆半导体的功率开关（FPS）由一个高压电源和电流值SenseFET模式PWMIC。包括功能的PWM控制器集成固定振荡器，欠压锁定，该优化开启/关闭驱动器门打开，热关闭掉电保护，过电压保护，以及温度补偿精密电流源环路补偿和故障保护电路。相对于分立的MOSFET和控制器或碾压开关转换器解决方案，一飞兆功率开关（FPS）可以降低总的元件数量，缩小设计尺寸，并重量，并在同一时间提高效率，生产力和系统的可靠性。它有一个基本的平台适合具有成本效益的显示器的电源供应。
2013-3-12
DdatasheetPDF页码索引
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