HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS 150V ● rDS (ON) (MAX) 86mΩ ● ID

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 4V DRIVE ● VDSS 150V ● rDS (ON) (MAX) 86mΩ ● ID

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 150 V • rDS(ON) (max) : 86 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=30A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =86mΩ(Max) DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFETs

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 150 V • rDS(ON) (max) : 86 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.

High-Speed Switching Use Nch Power MOS FET

Features • Drive voltage : 4 V • VDSS : 150 V • rDS(ON) (max) : 86 mΩ • ID : 30 A • Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, Lamp control, Solenoid control, DC-DC converters, etc.