Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A)

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Applications High frequency DC-DC converters

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=23A@ TC=25℃ ·Drain Source Voltage -VDSS=150V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.09Ω(Max)@VGS = 10 V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET(Vdss=150V, Rds(on)max=0.090ohm, Id=23A)

Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) Fully Characterized Avalanche Voltage and Current Applications High frequency DC-DC converters

High frequency DC-DC converters

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HEXFET짰Power MOSFET

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