Half-Bridge IPM

FS236BQ是一款600V3A半桥功率模块，主要应用于风机、风扇、水泵等小功率电机驱动。FS236BQ采用增强型VDMOSFET技术和业界先进的超高压技术，超低的RDS(ON) 和快恢复特性，降低了导通损耗，改善了开关特性，增强可靠性。FS236BQ采用QFN-5x6小型封装，提供了非常紧凑的封装体，尤其适用于空间受限、要求紧凑的应用。 • 内置600V3A快恢复功率MOSFET\n• 内置高压栅极驱动电路(HVIC)\n• 电源电压工作范围: 13.5V~20V\n• 3.3V/5V逻辑输入兼容\n• 内置欠压保护\n• 优化dv/dt并采用了低电磁干扰设计\n• 输入直通防止\n• 输入高电平有效\n• 绝缘电压：1500Vrms/1min\n• 符合ROHS\n封装：QFN10-5×6;

IPM系列

COMPLEMENTARY SILICON POWER TRANSISTORS

DESCRIPTION The BD235 and BD237 are silicon epitaxial-base NPN power transistors in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. The complementary PNP types are BD236 and BD238 respectively. ■ SGS-THOMSON PREFERRED SALESTYPES

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

NPN video transistors

DESCRIPTION NPN video transistor in a SOT223 plastic package. PNP complements: BFQ256 and BFQ256A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability • Surface mounting. APPLICATIONS

Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)

The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications.

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 12 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● Max IGT of 50 mA (Quadrants 1 - 3)