High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 150 V • rDS(ON) (max) : 0.29 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

High-Speed Switching Use Pch Power MOS FET

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 150 V • rDS(ON) (max) : 0.29 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 150 V • rDS(ON) (max) : 0.29 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

High-Speed Switching Use Pch Power MOS FET

Features • Drive voltage : 4 V • VDSS : – 150 V • rDS(ON) (max) : 0.29 Ω • ID : – 20 A • Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns Applications Motor control, lamp control, solenoid control, DC-DC converters, etc.

Pch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE • 4V DRIVE • VDSS ............................................................ –150V • rDS (ON) (MAX) ................................................ 0.29Ω • ID ................................................................... –20A • Integrated Fast Recovery Diode

HIGH-SPEED SWITCHING USE

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