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FS20价格
参考价格:¥25.9778
型号:FS20-055 品牌:Triad Magnetics 备注:这里有FS20多少钱,2025年最近7天走势,今日出价,今日竞价,FS20批发/采购报价,FS20行情走势销售排行榜,FS20报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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FS20 | ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS 文件:685.53 Kbytes Page:9 Pages | XPPOWER | ||
FS20 | Essentially Unlimited Cycle Life Expectancy 文件:165.9 Kbytes Page:4 Pages | TEC 泰科电子 | ||
Flashers and Tower Lighting Controls Description The FS200 Series may be used to control inductive, incandescent, or resistive loads. Factory fixed flash rate of 45 or 90 FPM or may be ordered with a fixed custom flash rate ranging from 10 to 180 FPM. Encapsulation provides protection against shock, vibration, and humidity. Unif | Littelfuse 力特 | |||
EconoPACK3 with fast trench/fieldstop IGBT and EmCon3 diode EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode | eupec | |||
Double Side Cooled Module Electrical Features • Increased Blocking Voltage Capability to 700V • Integrated Current Sensor • Low Inductive Design • Tvj op = 150°C Mechanical Features • 2.5kV AC 1min Insulation • Double sided cooling • Compact design • RoHS compliant • Integrated NTC temperature sensor | Infineon 英飞凌 | |||
HybridPACKª Light Module Electrical Features • Increased blocking voltage capability to 705V • Low Switching Losses • Tvj op = 150°C • Trench IGBT 3 • VCEsat with positive Temperature Coefficient Mechanical Features • 2.5 kV AC 1min Insulation • Al2O3 Substrate with Low Thermal Resistance • High mechanical robu | Infineon 英飞凌 | |||
EasyPACK™ module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and PressFIT / NTC Features • Electrical features - VCES = 950 V - IC nom = 200 A / ICRM = 300 A - Low VCE,sat - Tvj,op = 150°C - TRENCHSTOPTM IGBT7 • Mechanical features - Al2O3 substrate with low thermal resistance - High power and thermal cycling capability - Integrated NTC temperature sensor - PressFI | Infineon 英飞凌 | |||
EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact) Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode | Infineon 英飞凌 | |||
EconoPACK™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC / bereits aufgetragenem Thermal Interface Material Electrical Features • Low switching losses • Low VCEsat • Tvj op = 150°C • VCEsat with positive temperature coefficient Mechanical Features • High power and thermal cycling capability • Integrated NTC temperature sensor • Copper base plate • PressFIT contact technology • Standard housi | Infineon 英飞凌 | |||
EconoPACK™3 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC Features • Electrical features - VCES = 1200 V - IC nom = 200 A / ICRM = 400 A - Low VCE,sat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 • Mechanical features - Integrated NTC temperature sensor - High power and thermal cycling capability - Solder contact technology - Al2O3 su | Infineon 英飞凌 | |||
EasyPACK™ module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and PressFIT / NTC Features • Electrical features - VCES = 1200 V - IC nom = 200 A / ICRM = 400 A - Low VCE,sat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 • Mechanical features - Al2O3 substrate with low thermal resistance - Copper base plate - High power and thermal cycling capability - Integr | Infineon 英飞凌 | |||
FlashStation FS2017 Highlights • 90K 4K Random Write IOPS1, high performance with low latency • Intel Xeon 8-core CPU and 16GB DDR4 ECC RDIMM, expandable up to 128GB • Dual onboard 10GBase-T ports, capable of installing optional 10GbE / 25GbE / 40GbE NICs • Complete virtualization solution for VMware, Window | SYNOLOGY 群晖科技 | |||
20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ...................................................................................... | Mitsubishi 三菱电机 | |||
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ...................................................................................... | POWEREX | |||
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ...................................................................................... | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ............................................................................... 200V ● rDS (ON) (MAX) ............................................................. 0.18Ω ● ID ........................................................................... | POWEREX | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.18Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ............................................................................... 250V ● rDS (ON) (MAX) ..............................................................0.20Ω ● ID ........................................................................... | POWEREX | |||
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ............................................................................... 250V ● rDS (ON) (MAX) ..............................................................0.20Ω ● ID ........................................................................... | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.20Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S | THINKISEMI 思祁半导体 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 600V ● rDS (ON) (MAX) .............................................................. 0.43Ω ● ID ...................................................................................... | Mitsubishi 三菱电机 | |||
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 600V ● rDS (ON) (MAX) .............................................................. 0.43Ω ● ID ...................................................................................... | POWEREX | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.43Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 250V ● rDS (ON) (MAX) .............................................................. 0.19Ω ● ID ...................................................................................... | Mitsubishi 三菱电机 | |||
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 250V ● rDS (ON) (MAX) .............................................................. 0.19Ω ● ID ...................................................................................... | POWEREX | |||
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 250V ● rDS (ON) (MAX) .............................................................. 0.19Ω ● ID ...................................................................................... | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.19Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | |||
HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ...................................................................................... | Mitsubishi 三菱电机 | |||
Nch POWER MOSFET HIGH-SPEED SWITCHING USE HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ...................................................................................... | POWEREX | |||
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ...................................................................................... | RENESAS 瑞萨 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 |
FS20产品属性
- 类型
描述
- 型号
FS20
- 制造商
CATHEDRAL
- 功能描述
SUSPENSION FILES F/S PK20
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
Infineon(英飞凌) |
24+ |
AG-ECONO3-4 |
914 |
原厂订货渠道,支持BOM配单一站式服务 |
|||
Infineon(英飞凌) |
24+ |
NA/ |
8735 |
原厂直销,现货供应,账期支持! |
|||
INFINEON |
23+ |
K-J |
27 |
只有原装,请来电咨询 |
|||
XP Power |
25+ |
全新-电源模块 |
19088 |
DC-DC转换器电源模块FS20-12交期短价格优#即刻询购立享优惠#长期有排单订 |
|||
MITSUBISHI/三菱 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
MITSUBISHI/三菱 |
25+ |
TO220 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
Infineon/英飞凌 |
24+ |
Module |
1262 |
全新原厂原装,进口正品现货,需要请联系电话:18675544552(微信同号) |
|||
MITSU |
24+/25+ |
1000 |
原装正品现货库存价优 |
||||
INFINEON |
21+ |
SMD |
563 |
十年信誉,只做原装,有挂就有现货! |
FS20芯片相关品牌
FS20规格书下载地址
FS20参数引脚图相关
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深圳科雨电子有限公司,联系人:卢小姐 手机:18975515225 原装正品 大量现货,有需要的可以联系我 QQ:97877805 微信:wei555222777
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