FS20价格

参考价格:¥25.9778

型号:FS20-055 品牌:Triad Magnetics 备注:这里有FS20多少钱,2025年最近7天走势,今日出价,今日竞价,FS20批发/采购报价,FS20行情走势销售排行榜,FS20报价。
型号 功能描述 生产厂家 企业 LOGO 操作
FS20

ISOLATED, PROPORTIONAL DC TO HV DC CONVERTERS

文件:685.53 Kbytes Page:9 Pages

XPPOWER

FS20

Essentially Unlimited Cycle Life Expectancy

文件:165.9 Kbytes Page:4 Pages

TEC

泰科电子

Flashers and Tower Lighting Controls

Description The FS200 Series may be used to control inductive, incandescent, or resistive loads. Factory fixed flash rate of 45 or 90 FPM or may be ordered with a fixed custom flash rate ranging from 10 to 180 FPM. Encapsulation provides protection against shock, vibration, and humidity. Unif

Littelfuse

力特

EconoPACK3 with fast trench/fieldstop IGBT and EmCon3 diode

EconoPACK™3 with fast trench/fieldstop IGBT³ and EmCon3 diode

eupec

Double Side Cooled Module

Electrical Features • Increased Blocking Voltage Capability to 700V • Integrated Current Sensor • Low Inductive Design • Tvj op = 150°C Mechanical Features • 2.5kV AC 1min Insulation • Double sided cooling • Compact design • RoHS compliant • Integrated NTC temperature sensor

Infineon

英飞凌

HybridPACKª Light Module

Electrical Features • Increased blocking voltage capability to 705V • Low Switching Losses • Tvj op = 150°C • Trench IGBT 3 • VCEsat with positive Temperature Coefficient Mechanical Features • 2.5 kV AC 1min Insulation • Al2O3 Substrate with Low Thermal Resistance • High mechanical robu

Infineon

英飞凌

EasyPACK™ module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and PressFIT / NTC

Features • Electrical features - VCES = 950 V - IC nom = 200 A / ICRM = 300 A - Low VCE,sat - Tvj,op = 150°C - TRENCHSTOPTM IGBT7 • Mechanical features - Al2O3 substrate with low thermal resistance - High power and thermal cycling capability - Integrated NTC temperature sensor - PressFI

Infineon

英飞凌

EiceDRIVER™ 1ED314xMU12F (1ED-X3 Compact)

Features • Single-channel isolated gate driver • For use with 600 V/650 V/1200 V/1700 V/2300 V IGBTs, Si and SiC MOSFETs • Up to 6.5 A typical peak output current • 45 ns propagation delay with 7 ns part-to-part matching (skew) • 35 V absolute maximum output supply voltage • High common-mode

Infineon

英飞凌

EconoPACK™3 Modul mit Trench/Feldstopp IGBT4 und Emitter Controlled 4 Diode und NTC / bereits aufgetragenem Thermal Interface Material

Electrical Features • Low switching losses • Low VCEsat • Tvj op = 150°C • VCEsat with positive temperature coefficient Mechanical Features • High power and thermal cycling capability • Integrated NTC temperature sensor • Copper base plate • PressFIT contact technology • Standard housi

Infineon

英飞凌

EconoPACK™3 module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and NTC

Features • Electrical features - VCES = 1200 V - IC nom = 200 A / ICRM = 400 A - Low VCE,sat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 • Mechanical features - Integrated NTC temperature sensor - High power and thermal cycling capability - Solder contact technology - Al2O3 su

Infineon

英飞凌

EasyPACK™ module with TRENCHSTOP™IGBT7 and emitter controlled 7 diode and PressFIT / NTC

Features • Electrical features - VCES = 1200 V - IC nom = 200 A / ICRM = 400 A - Low VCE,sat - Overload operation up to 175°C - TRENCHSTOPTM IGBT7 • Mechanical features - Al2O3 substrate with low thermal resistance - Copper base plate - High power and thermal cycling capability - Integr

Infineon

英飞凌

FlashStation FS2017

Highlights • 90K 4K Random Write IOPS1, high performance with low latency • Intel Xeon 8-core CPU and 16GB DDR4 ECC RDIMM, expandable up to 128GB • Dual onboard 10GBase-T ports, capable of installing optional 10GbE / 25GbE / 40GbE NICs • Complete virtualization solution for VMware, Window

SYNOLOGY

群晖科技

20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Common Anode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Common Cathode Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Doubler Polarity Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ......................................................................................

Mitsubishi

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ......................................................................................

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ......................................................................................

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ............................................................................... 200V ● rDS (ON) (MAX) ............................................................. 0.18Ω ● ID ...........................................................................

POWEREX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.18Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ............................................................................... 250V ● rDS (ON) (MAX) ..............................................................0.20Ω ● ID ...........................................................................

POWEREX

MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● 10V DRIVE ● VDSS ............................................................................... 250V ● rDS (ON) (MAX) ..............................................................0.20Ω ● ID ...........................................................................

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.20Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

THINKISEMI

思祁半导体

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 600V ● rDS (ON) (MAX) .............................................................. 0.43Ω ● ID ......................................................................................

Mitsubishi

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 600V ● rDS (ON) (MAX) .............................................................. 0.43Ω ● ID ......................................................................................

POWEREX

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.43Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 250V ● rDS (ON) (MAX) .............................................................. 0.19Ω ● ID ......................................................................................

Mitsubishi

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 250V ● rDS (ON) (MAX) .............................................................. 0.19Ω ● ID ......................................................................................

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 250V ● rDS (ON) (MAX) .............................................................. 0.19Ω ● ID ......................................................................................

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.19Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ......................................................................................

Mitsubishi

三菱电机

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ......................................................................................

POWEREX

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● VDSS ................................................................................ 300V ● rDS (ON) (MAX) .............................................................. 0.26Ω ● ID ......................................................................................

RENESAS

瑞萨

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=20A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.26Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

ISC

无锡固电

FS20产品属性

  • 类型

    描述

  • 型号

    FS20

  • 制造商

    CATHEDRAL

  • 功能描述

    SUSPENSION FILES F/S PK20

更新时间:2025-9-28 15:52:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FEELINGTECHNOLOGY
2223+
TO92-4
26800
只做原装正品假一赔十为客户做到零风险
LB
2450+
SMD
8850
只做原装正品假一赔十为客户做到零风险!!
RENESAS
23+
TO-263
8560
受权代理!全新原装现货特价热卖!
Renesas
21+
10
全新原装鄙视假货
03+
2450
全新原装进口自己库存优势
RENESAS
原厂封装
9800
原装进口公司现货假一赔百
INFINEON/英飞凌
24+
NA
500
全新原装现货特价销售,欢迎来电查询
MITSUBIS三凌
23+
TO-3P
5000
原装正品,假一罚十
XP Power
24+
N/A
12000
一级代理保证进口原装正品假一罚十价格合理
TE/泰科
2508+
/
473077
一级代理,原装现货

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