Schottky Rectifier

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扬声器功率放大芯片

FS1815LN是一款模拟输入、集成Smart Power Control模块的扬声器功率放大芯片，具备高性能、低功耗的特性，搭配傅里叶FS Sound音效算法，适用手机、平板、智能手表、智能家居等设备。 • Boost converter voltage up to 8.5V\n• High performance Class-D amplifier\n• High efficiency boost\n\n- Total efficiency of boost + Class-D up to;

DSP Smart PA

FS1862SU是一款集成傅里叶SDG微型扬声器振幅和温度保护算法、FS Sound音效算法和I/V信号检测功能的智能扬声器功率放大芯片，具备高性能、低功耗的特性，适用手机、平板、智能手表、智能家居等设备。 • High fidelity 24-bits DAC\n•  High efficiency adaptive boost\n•  High efficiency Class-H\n•  Built in audio processor\n•  Adaptive speaker membrane displacement control\n•  Digital I2S I/O\n•  I2C control port maximum speed up to 1MHz\n•  Mono Class-D speaker driver;

智能扬声器功率放大芯片

FS1896U是一款集成傅里叶SDG微型扬声器振幅和温度保护算法、FS Sound音效算法和I/V信号检测功能的智能扬声器功率放大芯片，具备低功耗、小尺寸的特性，适用于手机、平板、智能手表等移动设备。 • High fidelity 24-bits DAC\n• High efficiency adaptive boost\n• High efficiency Class-D\n\n- Integrated high efficiency Class-D ampli;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=18A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.40Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=18A@ TC=25℃ ·Drain Source Voltage -VDSS=450V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=18A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS 500V ● rDS (ON) (MAX) 0.40Ω ● ID

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

● VDSS 500V ● rDS (ON) (MAX) 0.40Ω ● ID 18A APPLICATION SM

MITSUBISHI Nch POWER MOSFET

● VDSS 500V ● rDS (ON) (MAX) 0.40Ω ● ID 18A APPLICATION SM

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS 700V ● rDS (ON) (MAX) 0.55Ω ● ID

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS 700V ● rDS (ON) (MAX) 0.55Ω ● ID

HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS 450V ● rDS (ON) (MAX) 0.33Ω ● ID

Nch POWER MOSFET HIGH-SPEED SWITCHING USE

HIGH-SPEED SWITCHING USE ● VDSS 450V ● rDS (ON) (MAX) 0.33Ω ● ID

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=18A@ TC=25℃ ·Drain Source Voltage -VDSS=450V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.33Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

MITSUBISHI Nch POWER MOSFET

HIGH-SPEED SWITCHING USE ● VDSS 450V ● rDS (ON) (MAX) 0.33Ω ● ID

HIGH-SPEED SWITCHING USE

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HIGH - SPEED SWITCJING USE

文件：78.4 Kbytes Page：4 Pages

HIGH-SPEED SWITCHING USE

文件：105.03 Kbytes Page：7 Pages

HIGH-SPEED SWITCHING USE

文件：104.38 Kbytes Page：7 Pages