HybridPACK™ Drive G2 module with SiC MOSFET

Features • Electrical features - VDSS = 750 V - IDN = 620 A - New semiconductor material - silicon carbide - Low RDS,on - Low switching losses - Low Qg and Crss - Low inductive design - Tvj,op = 175°C - Short-time extended operation temperature Tvj,op = 200 °C • Mechanical features - 4

该 HybridPACK ™ Drive G2 CoolSiC ™ G2 模块是一款高度紧凑的 B6 桥功率模块（750V/620A），其增强型封装针对各种逆变器功率等级进行了优化。