11A, -100V, 0.300 Ohm, Rad Hard, P-Channel Power MOSFETs

Description Intersil has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness rangi

P-CHANNEL POWER MOSFETS

FEATURES • Low RDS(on) • Improved inductive ruggedness • Fsat switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability

1:18 LVCMOS FANOUT BUFFER

1:18 LVCMOS Fanout Buffer The MPC9140 is a 1:18 LVCMOS fanout buffer targeted to support Intel based Pentium II™ microprocessor chip sets. The device features 18 low skew outputs optimized to drive the clock inputs of standard unbuffered SDRAM modules. Standard unbuffered SDRAM modules require fo

P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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P-CHANNEL POWER MOSFET FOR HI-REL APPLICATIONS

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Precision Micropower Shunt Voltage Reference

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