23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs

Description Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron

23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs

Description Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron

23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs

Description Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) with neutron

OVEN CONTROLLED CRYSTAL OSCILLTORS (OCXO)

[NDK] Main applications : Communications equipment, Measuring instruments etc. Features : 1. Excellent aging characteristics 2. Wide frequency range (9168A Series) 3. Anti-microphonic noise (9140A-BGE71, 9140A-CEE70)

OVEN CONTROLLED CRYSTAL OSCILLTORS (OCXO)

[NDK] Main applications : Communications equipment, Measuring instruments etc. Features : 1. Excellent aging characteristics 2. Wide frequency range (9168A Series) 3. Anti-microphonic noise (9140A-BGE71, 9140A-CEE70)

Excellent display resolution

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Mounting brackets

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1024x4 High-Speed Static R/W RAM

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