| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FR803S | FAST RECOVERY GLASS PASSIVATED RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes FEATURES * Fast switching * Low leakage * Low forward voltage drop * High current capability * High surge capability * High reliability | RECTRON 丽正 | ||
FR803S | Recovery Rectifiers | RECTRON 丽正 | ||
FR803S | FAST RECOVERY GLASS PASSIVATED RECTIFIER (VOLTAGE RANGE 50 to 800 Volts CURRENT 8.0 Amperes) 文件:23.97 Kbytes Page:2 Pages | RECTRON 丽正 | ||
2 W, 806 to 905 MHz UHF POWER AMPLIFIERS The RF Line UHF Power Amplifiers Capable of wide power range control as encountered in portable cellular radio applications (30 dB typical). • MHW803–2 806–870 MHz • Specified 7.5 Volt Characteristics RF Input Power = 1 mW (0 dBm) RF Output Power = 2 Watts Minimum Gain (VControl | MOTOROLA 摩托罗拉 | |||
DARLINGTON POWER TRANSISTORS COMPLEMENTARY These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built−in Base−Emitter Resistors to Limit Leakage − Multiplication • Choice of Packages − M | ONSEMI 安森美半导体 | |||
POWER TRANSISTORS(4.0A,60-80V,40W) PLASTIC DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS ... designed for general-purpose amplifier and low-speed switching applications. FEATURES * High DCCurrent Gain — hFE = 2000 (Typ) @ IC = 2.0 A * Monolithic Construction with Built-in Base-Emitter Resistors to Limit Leakage Multiplicat | MOSPEC 统懋 | |||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors | NEC 瑞萨 | |||
NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD µPA803T has built-in 2 transistors which were developed for UHF. FEATURES • High fT fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz) • Small Collector Capacitance Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz) • A Surface Mounting Package Adopted • Built-in 2 Transistors | NEC 瑞萨 |
FR803S产品属性
- 类型
描述
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RECTRON |
23+ |
D2PAK |
7600 |
专注配单,只做原装进口现货 |
FR803S规格书下载地址
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DdatasheetPDF页码索引
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