Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT)

Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA25312B is a high efficiency InGaP HBT amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. It is suitable for applications

Heterojunction Bipolar Transistor Technology (InGaP HBT)

POWER TRANSISTORS(7A,150-200V,60W)

Quadruple bidirectional ESD transient voltage suppressor

DESCRIPTION 4-bit wide monolithic bidirectional ESD transient voltage suppressor in a six lead SOT457 (SC-74) package. FEATURES • ESD rating >15 kV, according to IEC1000-4-2 • SOT457 surface mount package • Non-clamping range: −5 V to +5 V • Channel separation: >70 dB • Low reverse current:

IN-LINE MINIATURE SINGLE PHASE SILICON BRIDGE(VOLTAGE - 50 to 800 Volts CURRENT - 4.0 Amperes)

FEATURES • Plastic material has Underwriters Laboratory Flammability Classification 94V-O • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Surge overload rating: 200 Amperes peak • Pb free product are available : 99 Sn above can meet Rohs

HIGH VOLTAGE LINEAR REGULATOR POWER I.C.

DESCRIPTION The VB408, VB408B, VB408FI are fully protected positive adjustable voltage regulators made using a proprietary High Voltage VIPower technology. The device can be connected to a D.C. source (up to 400V) or in off-line application directly to the rectified main (110V/230V). It is parti

HIGH VOLTAGE LINEAR REGULATOR POWER I.C.

DESCRIPTION The VB408, VB408B, VB408FI are fully protected positive adjustable voltage regulators made using a proprietary High Voltage VIPower technology. The device can be connected to a D.C. source (up to 400V) or in off-line application directly to the rectified main (110V/230V). It is parti