GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS

FEATURES : * Glass passivated chip * High current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free

GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER

Reverse Voltage - 50 to 1000 Volts Forward Current - 2.5 Amperes Features ● Plastic package has Underwriters Laboratory Flammability Classification 94V-0 utilizing Flame retardant epoxy molding compound ● Glass passivated junction in R-3 package ● 2.5 ampere operation at TA=55 with no

FAST RECOVER Y RECTIFIER DIODES

VOLTAGE RANGE: 50 - 1000V CURRENT: 2.5 A Features ● Diffused Junction ● Low Forward Voltage Drop ● High Reliability ● High Surge Current Capability ● Glass passivated device

Plastic Fast Recover Rectifier Reverse Voltage 50 to 1000V Forward Current 2.5A

Reverse Voltage 50 to 1000V Forward Current 2.5A Features • Glass passivated chip • Low reverse leakage • High forward surge capability • High temperature soldering guaranteed: 260℃/10 seconds, 0.375 (9.5mm) lead length, 5 lbs. (2.3kg) tension • Lead and body according with RoHS standard

GLASS PASSIVATED JUNCTION FAST RECOVERY RECTIFIERS

PRV : 50 - 1000 Volts Io : 2.5 Amperes FEATURES : * Glass passivated chip * High current capability * High reliability * Low reverse current * Low forward voltage drop * Fast switching for high efficiency * Pb / RoHS Free

2.5A GLASS PASSIVATED FAST RECOVERY DIODE

Features ● Diffused Junction ● Low Forward Voltage Drop ● High Current Capability ● High Reliability ● High Surge Current Capability

Plastic Fast Recover Rectifier

文件：120.12 Kbytes Page：2 Pages

GLASS PASSIVATED JUNCTION

文件：99.99 Kbytes Page：2 Pages

PNP video transistors

DESCRIPTION PNP video transistor in a SOT128B (TO-202) plastic package. NPN complements: BFQ235 and BFQ235A. FEATURES • High breakdown voltages • Low output capacitance • High gain bandwidth • Good thermal stability • Gold metallization ensures excellent reliability.

MEDIUM CURRENT PLASTIC RECTIFIER(VOLTAGE - 200 to 1300 Volts CURRENT - 3.0 Amperes)

FEATURES ● Exce High surge current capability ● Plastic package has Underwriters Laboratory Flammability Classification 94V-O ● Low leakage ● Void-free molded in DO-201AD plastic package ● High current operation of 3 Amperes at TA=95 ¢J with no thermal runaway ● eds environmental standards o

N-CHANNEL BROADBAND RF POWER FET

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode Designed for broadband commercial and industrial applications at frequencies to 54 MHz. The high gain, broadband performance and linear characterization of this device makes it ideal for large–signal, common source a

RF Power Field-Effect Transistor

The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode

Silicon NPN Transistor Horizontal Driver, Amp

文件：20.08 Kbytes Page：2 Pages