N-Channel QFET MOSFET 400 V, 3.4 A, 1.6 Ohm

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

400V N-Channel MOSFET

Features • 4.5A, 400V, RDS(on) = 1.6Ω @VGS = 10 V • Low gate charge ( typical 10 nC) • Low Crss ( typical 7.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable off-state characteristics, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Power Supplies

PowerMOS transistor Isolated version of PHP10N40E

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable blocking voltage, fast switching and high thermal cycling performance with low thermal resistance. Intended for use in Switched Mode Pow

TMOS POWER FET 5.0 AMPERES 400 VOLTS RDS(on) = 1.0 OHM

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