位置：首页 > IC中文资料第336页 > FQU24N08
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQU24N08 | 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 |   | |
FQU24N08 | 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | |
FQU24N08 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=19.6A@ TC=25℃ ·Drain Source Voltage -VDSS=80V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.06Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | |
80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |
FQU24N08产品属性
- 类型
描述
- 型号
FQU24N08
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NEXPERIA/安世 |
23+ |
SOD323 |
69820 |
终端可以免费供样,支持BOM配单! |
|||
FAIRCHILD/仙童 |
25+ |
I-PAKTO-251 |
20000 |
原装 |
|||
FAIRCHIL |
23+ |
TO-251 |
5600 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
FAIRC |
2023+ |
TO-251(IPAK) |
50000 |
原装现货 |
|||
FAIRCHILD/仙童 |
23+ |
TO-251 |
85000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FAIRCHILD/仙童 |
25+ |
I-PAK |
880000 |
明嘉莱只做原装正品现货 |
|||
FAIRCHILD/仙童 |
21+ |
I-PAKTO-251 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
FAIRCHILD/仙童 |
25+ |
TO-251 |
30000 |
全新原装现货,价格优势 |
|||
FAIRCHILD |
25+23+ |
TO251 |
8039 |
绝对原装正品全新进口深圳现货 |
|||
FAIRCHILD |
24+ |
TO-251(IPAK) |
8866 |
FQU24N08芯片相关品牌
FQU24N08规格书下载地址
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2021-1-14
DdatasheetPDF页码索引
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