200V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc P-Channel MOSFET Transistor

FEATURES · Drain Current -ID= -5.2A@ TC=25℃ · Drain Source Voltage -VDSS= -200V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.69Ω(Max)@VGS= -10V DESCRIPTION · DC Motor Control · Switched Mode Power Supplies · Audio Amplifier

功率 MOSFET，P 沟道，QFET®，-200 V，-5.2 A，690 mΩ，TO-220F

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •-5.2 A、-200 V、RDS(on)= 0.69 Ω（最大值），需 VGS = -10 V、ID = -2.6 A栅极电荷低（典型值：19nC)\n•低 Crss（典型值25pF)\n•100% 经过雪崩击穿测试\n•100% avalanche tested;

200V P-Channel MOSFET

200V P-Channel MOSFET

200V P-Channel MOSFET

200V P-Channel MOSFET

200V P-Channel MOSFET

200V P-Channel MOSFET

200V P-Channel MOSFET

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