700V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.0A@ TC=25℃ ·Drain Source Voltage -VDSS=700V(Min) ·Static Drain-Source On-Resistance -RDS(on) =6.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

功率 MOSFET，N 沟道，QFET®，700 V，2.0 A，6.3 Ω，TO-220F

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •2A, 700V, RDS(on)= 6.3Ω（最大值）@VGS = 10 V, ID = 1.0A栅极电荷低（典型值：9nC)\n•低 Crss（典型值5pF)\n•100% 经过雪崩击穿测试\"\n• 100% avalanche tested;

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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700V N-Channel MOSFET

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700V N-Channel MOSFET

文件：949.12 Kbytes Page：8 Pages

700V N-Channel MOSFET

文件：854.99 Kbytes Page：8 Pages