700V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=2.0A@ TC=25℃ ·Drain Source Voltage -VDSS=700V(Min) ·Static Drain-Source On-Resistance -RDS(on) =6.3Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

2 Amps, 700 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 2N70 is a high voltage MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, P

2 Amps, 700 Volts N-CHANNEL POWER MOSFET

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N-CHANNEL ENHANCEMENT

文件：351.49 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT

文件：351.49 Kbytes Page：7 Pages

N-CHANNEL ENHANCEMENT

文件：351.49 Kbytes Page：7 Pages