200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology.

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.6A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.69Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

Power MOSFET, N-Channel, QFET®, 200 V, 6.6 A, 0.69 Ω, TO-220

These N-Channel enhancement mode power field effect transistors are produced using ON's proprietary, planar stripe, DMOS technology.\nThis device is well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply and motor control • 6.6A, 200V, RDS(ON) = 0.69Ω @ VGS = 10 V\n• Low gate charge (typical 8.0nC)\n• Low Crss (typical 9.0pF)\n• Fast switching\n• 100% avalanche tested\n• Improved dv/dt capability;

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

200V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

TMOS POWER FET 7.0 AMPERES 200 VOLTS RDS(on) = 0.70 OHMS

文件：223.23 Kbytes Page：8 Pages