500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

功率 MOSFET，N 沟道，QFET®，500 V，40 A，110 mΩ，TO-264

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体®的专有平面条形和 DMOS 技术生产。 这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。 这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •40A，500V，RDS(on)= 110mΩ（最大值）（VGS = 10 V 且 ID = 20A 时）\n•低栅极电荷（典型值 155nC)\n•低 Crss（典型值 95pF)\n•100% 经过雪崩击穿测试;

isc N-Channel MOSFET Transistor

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N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 40A@ TC=25℃ · Drain Source Voltage -VDSS= 500V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.11Ω(Max)@VGS= 10V APPLICATIONS · Switched Mode Power Supplies · FPC · Electronic Lamp Ballasts

功率 MOSFET，N 沟道，QFET®，FRFET®，500 V，40 A，110mΩ，TO-264

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关电源、有源功率因数校正（PFC）及照明灯电子镇流器。 •40A, 500V, RDS(on)= 110mΩ（最大值）@VGS = 10 V, ID = 20A栅极电荷低（典型值：155nC)\n•低 Crss（典型值95pF)\n•100% 经过雪崩击穿测试\n•快速恢复体二极管（最大值 250ns）\n•Fast recovery body diode ( Max. 250ns );

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

Power MOSFET

FEATURES • Superfast Body Diode Eliminates the Need for    External Diodes in ZVS Applications • Lower Gate Charge Results in Simpler Drive    Requirements • Enhanced dV/dt Capabilities Offer Improved Ruggedness • Higher Gate Voltage Threshold Offers Improved Noise    Immunity • Compliant

Power MOSFET(Vdss=500V, Rds(on)typ.=0.087ohm, Id=46A)

Benefits ● Low Gate Charge Qg results in Simple Drive Requirement ● Improved Gate, Avalanche and Dynamicdv/dt Ruggedness ● Fully Characterized Capacitance and Avalanche Voltage and Current ● Low Trr and Soft Diode Recovery ● High Performance Optimised Anti-parallel Diode Applications

HEXFET짰Power MOSFET

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