250V N-Channel MOSFET

Features • 5.5A, 250V, RDS(on) = 1.0Ω @VGS = 10 V • Low gate charge ( typical 6.6 nC) • Low Crss ( typical 7.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

250V n-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

250V N-Channel MOSFET

250V N-Channel MOSFET

250V N-Channel MOSFET

250V N-Channel MOSFET

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

■ TYPICAL RDS(on)= 0.7Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ INDUST

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

■ TYPICAL RDS(on)= 0.7Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH SPEED SWITCHING ■ UNINTERRUPTIBLE POWER SUPPLY (UPS) ■ MOTOR CONTROL, AUDIO AMPLIFIERS ■ INDUST