200V N-Channel MOSFET

Features • 3.6A, 200V, RDS(on) = 1.4Ω @VGS = 10 V • Low gate charge ( typical 5.0 nC) • Low Crss ( typical 5.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 3.8A, 200V, RDS(on) = 1.35Ω @VGS = 10 V • Low gate charge ( typical 4.0 nC) • Low Crss ( typical 6.0 pF) • Fast swit

MOSFET N-CH 200V 3.8A I2PAK

MOSFET N-CH 200V 3.6A I2PAK

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

200V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand h

N-CHANNEL 200V - 1.2ohm - 4A DPAK/IPAK MESH OVERLAY??MOSFET

DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for li

N - CHANNEL 200V - 1.3 ohm - 4A TO-220 POWER MOS TRANSISTOR

N - CHANNEL 200V - 1.3 Ω - 4A TO-220 POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 1.3 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 150 oC OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS ■ HIGH CURRENT, HIGH SPE

TMOS POWER FET 4.0 AMPERES 200 VOLTS RDS(on) = 1.2 OHM

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