300V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 22A, 300V, RDS(on) = 0.16Ω @VGS = 10 V • Low gate charge ( typical 47 nC) • Low Crss ( typical 40pF) • Fast switching • 100

300V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=21A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.16Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

300V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

300V N-Channel MOSFET

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