位置：首页 > IC中文资料第3624页 > FQI12N50
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQI12N50 | 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 |   | |
MOSFET N-CH 500V 12.1A I2PAK | ONSEMI 安森美半导体 | | ||
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev | MICROSEMI 美高森美 | | ||
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equivale | ZETEX | | ||
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equivale | ZETEX | |
FQI12N50产品属性
- 类型
描述
- 型号
FQI12N50
- 功能描述
MOSFET N-CH 500V 12.1A I2PAK
- RoHS
是
- 类别
分离式半导体产品 >> FET - 单
- 系列
QFET™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
I2PAK(TO-262) |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
onsemi |
25+ |
I2PAK(TO-262) |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
FAIRCHILD/仙童 |
2026+ |
TO-262-3 |
100 |
原装正品,假一罚十! |
|||
Fairchild/ON |
22+ |
TO2623 Long Leads I2Pak TO262A |
9000 |
原厂渠道,现货配单 |
|||
FSC |
06+ |
TO-220-3 |
85 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD |
24+ |
TO-262 |
8866 |
||||
仙童 |
06+ |
TO-262 |
2500 |
原装 |
|||
FAIRCHILD |
10+ |
TO-262-3 |
100 |
全新 发货1-2天 |
|||
FAIRCHILD/仙童 |
23+ |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
||||
Fairchild/ON |
23+ |
TO2623 Long Leads I2Pak TO262A |
8000 |
只做原装现货 |
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DdatasheetPDF页码索引
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