400V Dual N & P-Channel MOSFET

General Description These dual N and P-channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4904 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode

General Description The AO4904 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A Schottky diode is co-packaged in parallel with the synchronous

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 12.8 VOLT NOMINAL ZENER VOLTAGE ± 5 • LOW NOISE • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

Adjustable RF Inductors

文件：29.55 Kbytes Page：1 Pages

Adjustable RF Inductors

文件：29.55 Kbytes Page：1 Pages