250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=6.2A@ TC=25℃ ·Drain Source Voltage -VDSS=250V(Min) ·Static Drain-Source On-Resistance -RDS(on) =0.55Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

文件：309.7 Kbytes Page：2 Pages

250V,8A N-Channel MOSFET

文件：379.59 Kbytes Page：6 Pages

250V,8A N-Channel MOSFET

文件：379.59 Kbytes Page：6 Pages

isc N-Channel MOSFET Transistor

文件：317.89 Kbytes Page：2 Pages