250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

250V P-Channel MOSFET

P 沟道，QFET® MOSFET，-250V，-3.1A，2.1Ω

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体®的专有平面条形和 DMOS 技术生产。 这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。 这些设备适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •-3.1 A、-250 V、RDS(on) = 2.1Ω ，需 VGS = -10 V\n•较低的栅极电荷（典型值为 10 nC）\n•较低的 Crss（典型值为 10.3 pF）\n•快速开关\n•100% 经过雪崩击穿测试;

MOSFET P-CH 250V 3.1A DPAK

250V P-Channel MOSFET

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250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a

250V P-Channel MOSFET

General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a