100V LOGIC N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15.6A@ TC=25℃ ·Drain Source Voltage -VDSS=100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.1Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel QFET MOSFET

文件：530.84 Kbytes Page：8 Pages

N-Channel 100 V (D-S) MOSFET

文件：1.01047 Mbytes Page：7 Pages

功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，15.6 A，100 mΩ，DPAK

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

100V N -Channel MOSFET

Features Low Gate Charge (Typ. 14 nC) Low Crss (Typ. 35 pF) VDS(V) = 100V ID =15.6A (VGS = 10V) RDS(ON)

N-channel Enhancement Mode Power MOSFET

Features  VDS= 100V, ID= 18.1 A RDS(ON)

N-Channel QFET짰 MOSFET 100 V, 15.6 A, 100 m廓

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst

N-Channel QFET MOSFET

文件：530.84 Kbytes Page：8 Pages

100V N-Channel MOSFET

DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and

100V N-Channel MOSFET

DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and

100V N-Channel MOSFET

DESCRIPTION The UTC 100V N-Channel enhancement mode power field effect transistors (MOSFET) are produced by UTC’s planar stripe, DMOS technology which has been tailored especially in the avalanche and commutation mode to minimize on-state resistance, provide superior switching performance, and

100V N-Channel MOSFET

文件：232.7 Kbytes Page：6 Pages

N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE

文件：333.11 Kbytes Page：8 Pages