N-channel Enhancement Mode Power MOSFET

Features  VDS= 200V, ID= 24 A RDS(ON)

N-Channel 200 V (D-S) MOSFET

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N-Channel QFET MOSFET 200 V, 15 A, 140 mOhm

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200V N-Channel MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high a

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=15A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.14Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

N-Channel QFET MOSFET

文件：737.24 Kbytes Page：9 Pages

200V N-Channel MOSFET

文件：754.08 Kbytes Page：9 Pages

N-Channel QFET MOSFET 200 V, 15 A, 140 mOhm

文件：737.24 Kbytes Page：9 Pages