FQB8N60CTM_WS价格

参考价格:¥7.7599

型号:FQB8N60CTM_WS 品牌:Fairchild 备注:这里有FQB8N60CTM_WS多少钱,2025年最近7天走势,今日出价,今日竞价,FQB8N60CTM_WS批发/采购报价,FQB8N60CTM_WS行情走势销售排行榜,FQB8N60CTM_WS报价。
型号 功能描述 生产厂家 企业 LOGO 操作

7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 8N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching ap

UTC

友顺

isc N-Channel Mosfet Transistor

·FEA TURES ·Drain Current –ID= 7.5A@TC=25℃ ·Drain Source Voltage-: VDSS= 600V(Min) ·Static Drain-SourceOn-Resistance : RDS(on) = 1.2Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high effi

ISC

无锡固电

7.5 Amps, 600/650 Volts N-CHANNEL POWER MOSFET

文件:217.21 Kbytes Page:8 Pages

UTC

友顺

N-CHANNEL POWER MOSFET

文件:473.72 Kbytes Page:7 Pages

ZSELEC

淄博圣诺

8A 600V N-channel Enhancement Mode Power MOSFET

文件:879.04 Kbytes Page:12 Pages

WXDH

东海半导体

FQB8N60CTM_WS产品属性

  • 类型

    描述

  • 型号

    FQB8N60CTM_WS

  • 功能描述

    MOSFET 600V, NCH MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-22 17:43:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
23+
TO-220F
98000
原厂授权代理,海外优势订货渠道。可提供大量库存,详
UTC/友顺
25+
TO220
55000
UTC/友顺8N60-TA3-T即刻询购立享优惠#长期有货
FSC
25+23+
TO-220
24874
绝对原装正品全新进口深圳现货
FSC
23+
TO-220F
4200
绝对全新原装!优势供货渠道!特价!请放心订购!
士兰微/IFR/仙童/WG
25+
TO-220F/251/252
188600
全新原厂原装正品现货 欢迎咨询
仙童
24+
TO-220
9000
AOS/万代
2019+
NA
3470
原厂渠道 可含税出货
FSC
24+
TO-220
663300
郑重承诺只做原装进口现货
华晶
TO-220F
50000
一级代理 原装正品假一罚十价格优势长期供货
2022+
300
全新原装真实库存含13点增值税票!

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