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FQB6N80TM价格
参考价格：￥5.5648
型号：FQB6N80TM 品牌：Fairchild 备注：这里有FQB6N80TM多少钱，2026年最近7天走势，今日出价，今日竞价，FQB6N80TM批发/采购报价，FQB6N80TM行情走势销售排行榜，FQB6N80TM报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 |   | ||
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan | FAIRCHILD 仙童半导体 | | ||
800V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withst | FAIRCHILD 仙童半导体 | |
FQB6N80TM产品属性
- 类型
描述
- 型号
FQB6N80TM
- 功能描述
MOSFET 800V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
26+ |
TO-263-3 |
10000 |
十年沉淀唯有原装 |
|||
FAIRCHILD/仙童 |
23+ |
TO-263D2PAK |
110500 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ON/安森美 |
21+ |
TO-263-3 |
8080 |
只做原装,质量保证 |
|||
ON/安森美 |
26+ |
TO263 |
1600 |
十五年行业诚信经营,专注全新正品 |
|||
ON/安森美 |
22+ |
TO263 |
12245 |
现货,原厂原装假一罚十! |
|||
ON/安森美 |
26+ |
TO-263-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
ON |
25+ |
TO-263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
FAIRCHILD |
26+ |
SOT |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
三年内 |
1983 |
只做原装正品 |
|||||
FAIRCHILD/仙童 |
20+ |
TO-2632L(D2PAK) |
36900 |
原装优势主营型号-可开原型号增税票 |
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FQB6N80TM规格书下载地址
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2019-8-15
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