500V N-Channel MOSFET

Features • 4.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V • Low gate charge ( typical 13 nC) • Low Crss ( typical 8.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability

500V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=5A@ TC=25℃ ·Drain Source Voltage -VDSS=500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 1.4Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

500V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

500V N-Channel MOSFET

功率 MOSFET，N 沟道，QFET®，500 V，5 A，1.4 Ω，D2PAK

SILICON GENERAL PURPOSE 1.0 AMP DIODES

SILICON GENERAL PURPOSE 1.0 AMP DIODES

MEDIUM CURRENT SILICON RECTIFIERS

[EDAL]

SILICON GENERAL PURPOSE 5.0 AMP DIODES

[EDAL]

300A NULL BALANCE CURRENT SENSOR

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