位置：首页 > IC中文资料第1079页 > FQB5N30TM
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
300V N-Channel MOSFET Features • 5.4A, 300V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical 9.8 nC) • Low Crss ( typical 9.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | FAIRCHILD 仙童半导体 |   | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=5.4A@ TC=25℃ ·Drain Source Voltage -VDSS=300V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.9Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
300V N-Channel MOSFET 300V N-Channel MOSFET | FAIRCHILD 仙童半导体 | | ||
300V N-Channel MOSFET Features • 5.4A, 300V, RDS(on) = 0.9Ω @VGS = 10 V • Low gate charge ( typical 9.8 nC) • Low Crss ( typical 9.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | FAIRCHILD 仙童半导体 | | ||
Fast Switching Speed 文件：67.38 Kbytes Page：2 Pages | ISC 无锡固电 | |
FQB5N30TM产品属性
- 类型
描述
- 型号
FQB5N30TM
- 功能描述
MOSFET 300V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD |
26+ |
SOPDIP16 |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
FAIRCHIL |
25+ |
TO-263 |
90000 |
一级代理商进口原装现货、价格合理 |
|||
Fairchild/ON |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
|||
FAIRCHILD/仙童 |
23+ |
D2-PAKTO-263 |
24190 |
原装正品代理渠道价格优势 |
|||
FAIRCILD |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
|||
仙童 |
06+ |
TO-263 |
3800 |
原装库存 |
|||
FAIRC |
2023+ |
TO-263(D2PAK |
50000 |
原装现货 |
|||
FSC |
23+ |
TO-263 |
7300 |
专注配单,只做原装进口现货 |
|||
FAIRCHILD/仙童 |
2026+ |
D2-PAKTO-263 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
onsemi |
25+ |
D2PAK(TO-263) |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
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FQB5N30TM规格书下载地址
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2019-8-15
DdatasheetPDF页码索引
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