位置：首页 > IC中文资料第1079页 > FQB5N15TM
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
150V N-Channel MOSFET Features • 4.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V • Low gate charge ( typical 13 nC) • Low Crss ( typical 8.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | FAIRCHILD 仙童半导体 |   | ||
150V N-Channel MOSFET Features • 4.5A, 500V, RDS(on) = 1.8Ω @VGS = 10 V • Low gate charge ( typical 13 nC) • Low Crss ( typical 8.5 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | FAIRCHILD 仙童半导体 | | ||
150V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan | FAIRCHILD 仙童半导体 | | ||
150V N-Channel MOSFET 150V N-Channel MOSFET | FAIRCHILD 仙童半导体 | | ||
High Speed Switching Applications Analog Switch Applications 文件：150.04 Kbytes Page：5 Pages | TOSHIBA 东芝 | |
FQB5N15TM产品属性
- 类型
描述
- 型号
FQB5N15TM
- 功能描述
MOSFET N-CH/150V/5.3A/0.78OHM
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
2026+ |
D2-PAKTO-263 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
onsemi |
25+ |
D2PAK(TO-263) |
21000 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ON |
22+ |
TO-263 |
20000 |
公司只做原装 品质保障 |
|||
FAIRCHILD/仙童 |
21+ |
D2-PAKTO-263 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
FAIRCILD |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
|||
FAIRCHILD |
24+ |
TO-263 |
8866 |
||||
FAIRCHILD/仙童 |
23+ |
D2-PAKTO-263 |
24190 |
原装正品代理渠道价格优势 |
|||
FAIRCHILD |
26+ |
SOP8-PP |
86720 |
全新原装正品价格最实惠 假一赔百 |
|||
JD/晶导 |
23+ |
SMC(DO-214AB) |
69820 |
终端可以免费供样,支持BOM配单! |
|||
FAIRC |
23+ |
TO-263(D2PAK) |
7300 |
专注配单,只做原装进口现货 |
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FQB5N15TM规格书下载地址
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2019-8-15
DdatasheetPDF页码索引
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