FQB50N06TM价格

参考价格:¥2.9608

型号:FQB50N06TM 品牌:Fairchild 备注:这里有FQB50N06TM多少钱,2026年最近7天走势,今日出价,今日竞价,FQB50N06TM批发/采购报价,FQB50N06TM行情走势销售排行榜,FQB50N06TM报价。
型号 功能描述 生产厂家 企业 LOGO 操作

TMOS POWER FET LOGIC LEVEL 50 AMPERES 60 VOLTS

TMOS E-FET Power Field Effect Transistors D2PAK for Surface Mount Logic Level TMOS (L2TMOS) N–Channel Enhancement–Mode Silicon Gate These TMOS Power FETs are designed for high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers. This

MOTOROLA

摩托罗拉

TMOS POWER FET 42 AMPERES 60 VOLTS

TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and 60 volt TMOS devices. Just as with our TMOS E–FET designs, TMOS V is designed to withstand high energy

MOTOROLA

摩托罗拉

TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo

MOTOROLA

摩托罗拉

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM

TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032 OHM N–Channel Enhancement–Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resis tance area product about one–half that of standard MOSFETs. This new technology more than doubles the present cell density of our 50 and

MOTOROLA

摩托罗拉

TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028 OHM

TMOS E-FET™ Power Field Effect Transistor N–Channel Enhancement–Mode Silicon Gate This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed fo

MOTOROLA

摩托罗拉

FQB50N06TM产品属性

  • 类型

    描述

  • 型号

    FQB50N06TM

  • 功能描述

    MOSFET 60V N-Channel QFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-3-14 19:10:02
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
24+
TO 220
161577
明嘉莱只做原装正品现货
MOTOROLA
24+
TO-220
65300
一级代理/放心购买!
MOTOROLA/摩托罗拉
00+
TO-220
122
MOT
22+
TO-220
20000
公司只做原装 品质保障
MOTOROLA
23+
NA
315
专做原装正品,假一罚百!
MOTOROLA/摩托罗拉
2450+
TO-220
9850
只做原装正品现货或订货假一赔十!
MOT
25+23+
TO-220
28626
绝对原装正品全新进口深圳现货
MOTOROLA/摩托罗拉
25+
TO-220
30000
全新原装现货,价格优势
MTP50N06V
25+
15
15
MOTOROLA
2025+
TO220
4835
全新原厂原装产品、公司现货销售

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