位置：首页 > IC中文资料第2109页 > FQB3N30TM
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
300V N-Channel MOSFET Features • 3.2A, 300V, RDS(on) = 2.2Ω @VGS = 10 V • Low gate charge ( typical 5.5 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | Fairchild 仙童半导体 |   | ||
300V N-Channel MOSFET 300V N-Channel MOSFET | Fairchild 仙童半导体 | | ||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID=2.4A@ TC=25℃ ·Drain Source Voltage -VDSS=200V(Min) ·Static Drain-Source On-Resistance -RDS(on) =2.2Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive. | ISC 无锡固电 | | ||
300V N-Channel MOSFET Features • 3.2A, 300V, RDS(on) = 2.2Ω @VGS = 10 V • Low gate charge ( typical 5.5 nC) • Low Crss ( typical 6.0 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability | Fairchild 仙童半导体 | | ||
300V N-Channel MOSFET 300V N-Channel MOSFET | Fairchild 仙童半导体 | |
FQB3N30TM产品属性
- 类型
描述
- 型号
FQB3N30TM
- 功能描述
MOSFET 300V N-Channel QFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
FAIRCHILD/仙童 |
25+ |
D2-PAKTO-263 |
54558 |
百分百原装现货 实单必成 欢迎询价 |
|||
FAIRCHILD/仙童 |
23+ |
TO-263 |
47910 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
FAIRCHILD/仙童 |
21+ |
D2-PAKTO-263 |
30000 |
优势供应 实单必成 可13点增值税 |
|||
FAIRCILD |
22+ |
TO-263 |
8000 |
原装正品支持实单 |
|||
FAIRCHILD |
24+ |
TO-263(D2PAK) |
8866 |
||||
onsemi(安森美) |
24+ |
TO-263 |
8357 |
支持大陆交货,美金交易。原装现货库存。 |
|||
FAIRCHILD |
24+ |
TO-263 |
9000 |
只做原装正品 有挂有货 假一赔十 |
|||
FAIRCHILD/仙童 |
23+ |
D2-PAKTO-263 |
24190 |
原装正品代理渠道价格优势 |
|||
FAIRC |
2023+ |
TO-263(D2PAK |
50000 |
原装现货 |
|||
FAIRC |
23+ |
TO-263(D2PAK) |
7300 |
专注配单,只做原装进口现货 |
FQB3N30TM规格书下载地址
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FQB3N30TM数据表相关新闻
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随时可发货
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2019-8-15
DdatasheetPDF页码索引
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