isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=-33.5A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 60mΩ(Max)@VGS= -10V DESCRIPTION ·Switched mode power supplies,audio amplifier, DC motor control,and variable switching power applications.

P-Channel QFET® MOSFET 100 V, -33.5 A, 60 mΩ

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

100V P-Channel MOSFET

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P-Channel QFET MOSFET

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P 沟道 QFET® MOSFET -100V，-33.5A，60mΩ

P-Channel QFET® MOSFET 100 V, -33.5 A, 60 mΩ

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

P-Channel Power MOSFET

Application + DC/DC Converter Portable equipment and battery « Power Switch

P-Channel QFET MOSFET

文件：526.41 Kbytes Page：9 Pages

100V P-Channel MOSFET

文件：1.20275 Mbytes Page：8 Pages

FQB34P10TM_F085: 100V P-Channel MOSFET -33.5A, 60mΩ

-33.5A, -100V, RDS(on) = 0.06廓 @VGS = -10 V

文件：1.20275 Mbytes Page：8 Pages