丝印代码：FQB34P10；P-Channel QFET® MOSFET 100 V, -33.5 A, 60 mΩ

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

丝印代码：FQB34P10；P-Channel Power MOSFET

Application + DC/DC Converter Portable equipment and battery « Power Switch

P 沟道 QFET® MOSFET -100V，-33.5A，60mΩ

该 P 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •低 Crss（典型值170pF)\n• Low switching loss\n•100% 经过雪崩击穿测试\n• Low switching loss\n•175°C最大结温额定值\"\n• High reliability\n• 175°C maximum junction temperature rating\n• High reliability\n•-33.5A, -100V, RDS(on)= 60mΩ（最大值）@VGS = -10 V, ID = -16.75A栅极电荷低（典型值：85nC);

P-Channel QFET® MOSFET 100 V, -33.5 A, 60 mΩ

Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

isc P-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=-33.5A@ TC=25℃ ·Drain Source Voltage -VDSS= -100V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 60mΩ(Max)@VGS= -10V DESCRIPTION ·Switched mode power supplies,audio amplifier, DC motor control,and variable switching power applications.

100V P-Channel MOSFET

文件：717.12 Kbytes Page：9 Pages

P-Channel QFET MOSFET

文件：526.41 Kbytes Page：9 Pages

FQB34P10TM_F085: 100V P-Channel MOSFET -33.5A, 60mΩ

这些P沟道增强模式功率场效应晶体管采用飞兆专有的平面条形DMOS技术生产。这一先进技术是专为最大限度地降低导通电阻，提供卓越的开关性能，以及在雪崩击穿和换相情况下承受高能量脉冲而开发的。这些器件非常适合音频放大器、高效开关DC/DC转换器以及DC电机控制等低压应用。 -33.5 A、-100 V、RDS(on) = 0.06Ω (VGS = -10 V)\n 低栅极电荷（典型值85 nC）\n 低Crss（典型值170pF）\n 快速开关\n 100% 经过雪崩击穿测试\n 提高了 dv/dt 性能\n 175°C最大结温额定值\n 符合 AEC Q101 标准\n 符合 RoHS 标准;

P-Channel QFET MOSFET

文件：526.41 Kbytes Page：9 Pages

100V P-Channel MOSFET

文件：1.20275 Mbytes Page：8 Pages

-33.5A, -100V, RDS(on) = 0.06廓 @VGS = -10 V

文件：1.20275 Mbytes Page：8 Pages

P-Channel QFET MOSFET

文件：526.41 Kbytes Page：9 Pages

100V P-Channel MOSFET

文件：717.12 Kbytes Page：9 Pages