250V N-Channel MOSFET

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=25.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.11Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

250V N-Channel MOSFET

N 沟道，UltraFET®，250V，25.5A，131mΩ

N-Channel UltraFET® 250 V, 25.5 A, 131 mΩ •典型 rDS(on)=108 mΩ，条件是 VGS=10 V、ID=25.5 A \n•典型 Qg(tot)=45 nC，条件是 VGS =10 V、ID =27 A \n•UIS 能力\n•符合 RoHS 标准\n•符合 AEC Q101;

N-Channel MOSFET

Features ■ Typ rDS(on) = 108mΩ at VGS = 10V, ID = 25.5A ■ Typ Qg(tot) = 45nC at VGS = 10V, ID = 27A ■ UIS Capability ■ RoHS Compliant ■ Qualified to AEC Q101 Applications ■ Automotive Engine Control ■ Powertrain Management ■ Solenoid and Motor Drivers ■ Electronic Steering ■ Integrated

MOSFET N-CH 250V 25.5A D2PAK

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 27A, 250V, RDS(on) = 0.11Ω @VGS = 10 V • Low gate charge ( typical 50 nC) • Low Crss ( typical 45 pF) • Fast switchi

250V N-Channel MOSFET

250V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energ

250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are product using Fairchilds proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstan