250V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. Features • 27A, 250V, RDS(on) = 0.11Ω @VGS = 10 V • Low gate charge ( typical 50 nC) • Low Crss ( typical 45 pF) • Fast switchi

N 沟道 QFET® MOSFET 250V, 2.7A, 110mΩ

250V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energ

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=25.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=250V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.11Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

250V N-Channel MOSFET

250V N-CHANNEL MOSFET

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