80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 53.3A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.017Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

80V N-Channel MOSFET

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 80V RDSON (MAX.) 65mΩ ID 15A UIS, 100 Tested Pb-Free Lead Plating & Halogen Free

N-CHANNEL MOSFET in a TO-220 Plastic Package

文件：1.25143 Mbytes Page：6 Pages

N-CHANNEL MOSFET in a TO-252 Plastic Package

文件：898.41 Kbytes Page：6 Pages

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

文件：231.01 Kbytes Page：6 Pages