80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=77.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 80V RDSON (MAX.) 65mΩ ID 15A UIS, 100 Tested Pb-Free Lead Plating & Halogen Free

N-CHANNEL MOSFET in a TO-220 Plastic Package

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N-CHANNEL MOSFET in a TO-252 Plastic Package

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N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

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