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型号 功能描述 生产厂家 企业 LOGO 操作
FQA70N08

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

FQA70N08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=77.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

FQA70N08

80V N-Channel MOSFET

ONSEMI

安森美半导体

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

FQA70N08产品属性

  • 类型

    描述

  • 型号

    FQA70N08

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-7-23 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
TDK
25+
插件
23458
样件支持,可原厂排单订货!
TDK
25+
插件
23510
正规渠道,免费送样。支持账期,BOM一站式配齐
Fairchild/ON
22+
TO3P3 SC653
9000
原厂渠道,现货配单
FAIRCHILD/仙童
25+
TO-3P
45000
FAIRCHILD/仙童全新现货FQA70N08即刻询购立享优惠#长期有排单订
FAIRCHILD/仙童
2223+
TO-3P
26800
只做原装正品假一赔十为客户做到零风险
FAIRCHILD
23+
TO3P
12800
##公司主营品牌长期供应100%原装现货可含税提供技术
FAIRCHILD/仙童
03+
TO-247
323
FSC
25+
TO-3P
30000
代理全新原装现货,价格优势
FSC
22+
TO-3P
20000
公司只做原装 品质保障
FSC/ON
26+
原包装原封□□
44527
原装进口特价供应特价,原装元器件供应,支持开发样品更多详细咨询库存

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