位置：首页 > IC中文资料第4192页 > FQA70N08
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
FQA70N08 | 80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 |   | |
FQA70N08 | isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID=77.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con | ISC 无锡固电 | | |
FQA70N08 | 80V N-Channel MOSFET | ONSEMI 安森美半导体 | | |
80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
80V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | |
FQA70N08产品属性
- 类型
描述
- 型号
FQA70N08
- 功能描述
MOSFET
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
25+ |
TO-3PN-3 |
30000 |
原装正品公司现货,假一赔十! |
|||
FAIRCHI |
23+ |
TO-247 |
8560 |
受权代理!全新原装现货特价热卖! |
|||
ON/安森美 |
24+ |
TO-3P |
83 |
价格让您心动 助您成单 |
|||
NA |
23+ |
NA |
26094 |
10年以上分销经验原装进口正品,做服务型企业 |
|||
ON/安森美 |
2023+ |
TO-247 |
6893 |
十五年行业诚信经营,专注全新正品 |
|||
FAIRCHILD |
24+ |
TO-3P |
3000 |
全新原装环保现货 |
|||
ON |
24+ |
TO-3P |
39500 |
进口原装现货 支持实单价优 |
|||
仙童 |
05+ |
TO-247 |
1500 |
原装进口 |
|||
ON/安森美 |
2021+ |
TO-3PN-3 |
7600 |
原装现货，欢迎询价 |
|||
FAIRCHILD/仙童 |
24+ |
65200 |
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FQA70N08规格书下载地址
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FQA70N08数据表相关新闻
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2024-8-7FQA30N40 TO-3P FAIRCHILD/仙童 MOS(场效应管) 原装正品
原装正品现货供应 0755-28892389/13713856319；QQ:2639752116；微信：13713856319；
2021-3-25FQA24N50
FQA24N50，全新原装现货0755-82732291当天发货或门市自取. QQ：1755232575 /QQ：1157611585，微信号:87680558.
2021-2-22FQA28N50
热门搜索： 4 Channel N-Channel MOSFET , 450 V MOSFET , Si SMD/SMT N-Channel MOSFET , 100 A 250 V MOSFET , TO-264-3 MOSFET , 1.35 V MOSFET
2020-6-29FQA9N90C
FQA9N90C，全新原装当天发货或门市自取0755-82732291.
2020-6-25FQA8N100C全新原装现货
随时可发货
2019-9-17
DdatasheetPDF页码索引
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