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型号 功能描述 生产厂家 企业 LOGO 操作
FQA70N08

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

FQA70N08

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID=77.5A@ TC=25℃ ·Drain Source Voltage- : VDSS=80V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 17mΩ(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC con

ISC

无锡固电

FQA70N08

80V N-Channel MOSFET

ONSEMI

安森美半导体

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

80V N-Channel MOSFET

General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs

FAIRCHILD

仙童半导体

FQA70N08产品属性

  • 类型

    描述

  • 型号

    FQA70N08

  • 功能描述

    MOSFET

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-14 19:39:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
25+
TO-3P
45000
FAIRCHILD/仙童全新现货FQA70N08即刻询购立享优惠#长期有排单订
ON/安森美
23+
TO-3PN-3
8080
正规渠道,只有原装!
ON/安森美
25+
TO-3PN-3
30000
原装正品公司现货,假一赔十!
FSC
18+
TO-247
85600
保证进口原装可开17%增值税发票
FAIRCHILD
24+
TO-3P
3000
全新原装环保现货
NA
23+
NA
26094
10年以上分销经验原装进口正品,做服务型企业
FAIRCHILD/仙童
2021
TO-3P
880000
明嘉莱只做原装正品现货
ON/安森美
21+
SMD
30000
百域芯优势 实单必成 可开13点增值税
ON/安森美
21+
TO-3PN-3
8080
只做原装,质量保证
ON/安森美
22+
N/A
12245
现货,原厂原装假一罚十!

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