150VN-ChannelMOSFET

Features •22A,150V,RDS(on)=0.09Ω@VGS=10V •Lowgatecharge(typical40nC) •LowCrss(typical50pF) •Fastswitching •100avalanchetested •Improveddv/dtcapability •175°Cmaximumjunctiontemperaturerating

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=22A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.09Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCcon

N-Ch150VFastSwitchingMOSFETs

Description TheFKD28N15isthehighestperformance trenchN-chMOSFETswithextremehighcell density,whichprovideexcellentRDSONandgate chargeformostofthesynchronousbuck converterapplications. TheFKD28N15meettheRoHSandGreen Productrequirement,100EASguaranteedwith f

150VN-ChannelMOSFET

Description TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhig

IscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=33A@TC=25℃ ·DrainSourceVoltage- :VDSS=150V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.09Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco

150VN-ChannelMOSFET

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