150V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

Isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 33A@ TC=25℃ ·Drain Source Voltage- : VDSS= 150V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.09Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC co

功率 MOSFET，N 沟道，QFET®，150V，33A，90mΩ，TO-3P

150V N-Channel MOSFET

文件：815.07 Kbytes Page：9 Pages

150V N-Channel MOSFET

文件：815.07 Kbytes Page：9 Pages

150V N-Channel MOSFET

文件：815.07 Kbytes Page：9 Pages

N-Ch 150V Fast Switching MOSFETs

Description The FKD28N15 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD28N15 meet the RoHS and Green Product requirement, 100 EAS guaranteed with f

150V N-Channel MOSFET

Features • 22A, 150V, RDS(on) = 0.09Ω @VGS = 10 V • Low gate charge ( typical 40 nC) • Low Crss ( typical 50 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating