N-Channel Power MOSFET

Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high av

功率 MOSFET，N 沟道，QFET®，150V，70A，28mΩ，TO-3P

该 N 沟道增强型功率 MOSFET 产品采用飞兆半导体的专有平面条形和 DMOS 技术生产。这种先进的 MOSFET 技术已专门定制用来降低导通电阻，并提供卓越的开关性能和较高的雪崩能量强度。这些器件适用于开关模式电源、音频放大器、直流电机控制和可变开关电源应用。 •70A, 150V, RDS(on)= 28mΩ（最大值）@VGS = 10 V, ID = 35A栅极电荷低（典型值：135nC)\n•低 Crss（典型值135pF)\n•100% 经过雪崩击穿测试\n•175°C最大结温额定值\"\n• 175°C Maximum Junction Temperature Rating;

isc N-Channel MOSFET Transistor

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N-Channel Power MOSFET

Features • 44A, 150V, RDS(on) = 0.028Ω @VGS = 10 V • Low gate charge ( typical 135 nC) • Low Crss ( typical 135 pF) • Fast switching • 100 avalanche tested • Improved dv/dt capability • 175°C maximum junction temperature rating

HiPerFETTM Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs ISOPLUS247™ (Electrically Isolated Backside) N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low d

HiPerFETTM Power MOSFETs

N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast