N-Channel Enhancement Mode

Avalanche Rated, High dv/dt, Low trr

Features

• International standard packages

• Low RDS (on) HDMOSTM process

• Rugged polysilicon gate cell structure

• Unclamped Inductive Switching (UIS) rated

• Low package inductance

- easy to drive and to protect

• Fast intrinsic Rectifier

Advantages

• Easy to mount

• Space savings

• High power density