900V N-Channel MOSFET

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology hasbeen especially tailored to minimize on-state resistance, provide superior switching performance, and withstand hig

isc N-Channel MOSFET Transistor

·FEATURES ·Low drain-source on-resistance: RDS(ON) =2.0Ω (typ.) ·Enhancement mode: VGS(th) = 3.0 to 5.0V (VDS = 10 V, ID=0.25mA) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators

900V N-Channel MOSFET

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900V N-Channel MOSFET

文件：789.54 Kbytes Page：9 Pages

900V N-Channel MOSFET

文件：789.54 Kbytes Page：9 Pages

900V N-Channel MOSFET

文件：797.3 Kbytes Page：8 Pages

900V N-Channel MOSFET

文件：797.3 Kbytes Page：8 Pages

900V N-Channel MOSFET

文件：789.54 Kbytes Page：9 Pages

Power MOSFET, N-Channel, QFET®, 900 V, 6 A, 2.3 Ω, TO-3P

功率 MOSFET，N 沟道，QFET®，900 V，6 A，2.3 Ω，TO-3P

6.2 Amps, 900 Volts N-CHANNEL POWER MOSFET

DESCRIPTION The UTC 6N90 is an N-channel enhancement mode Power FET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the

N-Channel Power MOSFET

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6.2A, 900V N-CHANNEL POWER MOSFET

文件：203.47 Kbytes Page：5 Pages

900V N-Channel MOSFET

文件：789.54 Kbytes Page：9 Pages

N-CHANNEL POWER MOSFET

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